Trace Metals

 

COMPREHENSIVE CHARACTERIZATION OF SILICON/POLYSILICON FOR SURFACE, SUB-SURFACE AND BULK TRACE METALS

Trace Metals Analytical Technique Contamination Source
Surface VPD ICP-MS,
Acidic Extraction ICP-MS		 Cleaning, handling,
environmental
Sub-surface Single or Successive Bulk Silicon Etch ICP-MS/OES Diffusion, crushing, cutting
texturing
Bulk Bulk Digestion ICP-MS/OES Intrinsic material

Analysis of Pseudo Square Wafer by VPD ICP-MS for Surface Trace Metals

Polysilicon Feedstock Analysis by Bulk Digestion
Various Depths Within Silicon Substrate

ELEMENTS 1st
5µm Etch		 2nd
5µm Etch		 3rd
5µm Etch
Aluminum (Al) 100 23 <5
Chromium (Cr) 190 <5 <5
Cobalt (Co) 4.1 <1 <1
Copper (Cu) 45 <5 <5
Iron (Fe) 650 <10 <10
Manganese (Mn) 16 <5 <5
Molybdenum (Mo) 27 <5 <5
Nickel (Ni) 160 7.0 <5
Sodium (Na) 160 14 <10
Titanium (Ti) 55 5.9 5.1
  • Three successive 5µm stepe tches by Bulk Silicon Etch method were performed on single polysilicon wafer to characterize trace metal levels within each etch depth
  • Process contaminants were introduced to the top 5µm of the substrate
  • Fully Quantitative
  • High Accuracy
  • High Sensitivity

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